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| (R) STPS80H100CY HIGH VOLTAGE POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS HIGH REVERSE VOLTAGE NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT HIGH TEMPERATURE LOW THERMAL RESISTANCE DESCRIPTION Dual center tap Schottky rectifier suited for Switched Mode Power Supplies and high frequencyDC to DC converters. Packaged in Max247, this device is intended for use in high frequency computer and telecom converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 155C = 0.5 2 x 40 A 100 V 175 C 0.70 V A1 K A2 A2 K A1 Max247 Value 100 50 Per diode Per device 40 80 400 2 - 65 to + 175 175 10000 Unit V A A A A C C V/s tp = 10 ms sinusoidal tp = 2 s square F = 1kHz *: dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(j-a) July 1999 - Ed: 1B 1/4 STPS80H100CY THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 0.7 0.4 0.1 Unit C/W When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0035 x IF2(RMS) Min. Typ. 7 Max. 20 20 0.8 0.7 0.94 0.84 Unit A mA V VR =VRRM IF = 40 A IF = 40 A IF = 80 A IF = 80 A 0.79 0.65 Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 35 30 25 20 15 10 5 0 0 5 10 15 IF(av) (A) 20 25 30 35 =tp/T T = 0.05 = 0.1 = 0.2 =1 = 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). IF(av)(A) 50 45 40 35 30 25 20 15 10 5 0 Rth(j-a)=Rth(j-c) Rth(j-a)=5C/W T tp =tp/T tp Tamb(C) 50 75 100 125 150 175 40 45 50 0 25 2/4 STPS80H100CY Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 500 400 Tc=50C Fig. 4: Relative variation of thermal impedance junction to case versus pulse (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 300 200 Tc=75C 0.6 0.4 = 0.5 = 0.2 = 0.1 Tc=110C T 100 0 1E-3 IM t 0.2 t(s) 1E-2 1E-1 1E+0 0.0 1E-3 Single pulse =0.5 tp(s) 1E-2 1E-1 =tp/T tp 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) 1E+4 Tj=125C Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 5.0 F=1MHz Tj=25C 1E+3 1E+2 1E+1 1E+0 1E-1 0 10 20 Tj=25C 1.0 VR(V) 30 40 50 60 70 80 90 100 0.1 1 2 5 VR(V) 10 20 50 100 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 500 Tj=125C 100 Tj=25C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/4 STPS80H100CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. E A Millimeters Min. Max. 5.30 2.60 1.40 2.40 3.40 0.80 10.30 5.55 15.90 15.20 4.30 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 Inches Min. 0.185 0.087 0.038 0.079 0.118 0.016 0.776 0.211 0.602 0.559 0.146 Max. 0.209 0.102 0.055 0.094 0.133 0.031 0.799 0.219 0.626 0.598 0.169 A A1 b D b1 b2 c L1 A1 L b1 b2 e b c D e E L L1 Ordering type STPS80H100CY Marking STPS80H100CY Package Max247 Weight 4.4g Base qty 30 Delivery mode Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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